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PARK, CHAN GYUNG(박찬경)

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-7 of 7 (Search time: 0.002 seconds).

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Subject : GAAS

Article

Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxySCIESCOPUS

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol. 42, no. 5, page. 1536 - 1539, 2010-03

Article

Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dotsSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 275, no. 3-4, page. 415 - 421, 2005-03-01

Article

Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealingSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 96, no. 10, page. 5496 - 5499, 2004-11-15

Article

Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxySCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 37, no. 12B, page. 7158 - 7160, 1998-12

Article

Fabrication of self-assembled quantum dots in lattice-matched GaAs/AlGaAs systemSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 33, page. S262 - S265, 1998-11

Article

Structural stability of low temperature grown InGaAs/GaAs heterostructureSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 26, no. 9, page. 1053 - 1057, 1997-09

Article

THE INTERACTIONS BETWEEN SI/CO FILMS AND GAAS(001) SUBSTRATESSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 23, no. 12, page. 1335 - 1341, 1994-12

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