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Showing results 8 to 11 of 11
Conference
Study on Insulator - metal transition characteristics of NbO2 for selector device

Non-Volatile Memory Technology Symposium 2017(NVMTS 2017), 2017-08-31

Conference
Te-Based Binary OTS Selectors with Excellent Selectivity (>105), Endurance (>108) and Thermal Stability (>450 °C)

2018 Symposia on VLSI Technology and Circuits., 2018-06-21

Conference
Thermally Stable Resistive Switching Characteristics of Te-Based Conductive-Bridge Memoryby Optimizing Zr-Te Composition

The 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회, 2018-02-07

Article
Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials PerspectiveSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 7, page. 2878 - 2883, 2020-07

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