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Conference

Accurate Extraction of Volume Trap Density from Si-Nanowire FET using the Newly Developed Cylindrical Coordinate Based 1/f noise model

17th Korean Conference on Semiconductors (2010), 2010-02-24

Conference

C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array

Solid State Devices and Materials (SSDM2010), page. 1277 - 1278, 2010-09-21

Conference

Characteristics of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects

IEEE IRPS(2010), 2010-05-02

Conference

Series Resistance Behavior Extracted from Silicon Nanowire Transistors Using the Y-function Technique

Solid State Devices and Materials (SSDM2009), page. 1108 - 1109, 2009-10-06

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