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Showing results 1 to 3 of 3
Article
ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITIONSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, vol. 31, no. 2A, page. L66 - L67, 1992-02-01

Article
DC AND RF PERFORMANCE OF LP-MOCVD GROWN AL0.25GA0.75AS/INXGA1-XAS (X=0.15-0.28) P-HEMT WITH SI-DELTA DOPED GAAS LAYERSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 16, no. 12, page. 563 - 565, 1995-12

Article
Effects of in situ treatment on InGaAs/InP heterointerfaces produced by organometallic chemical vapor deposition regrowthSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 70, no. 1, page. 502 - 503, 1991-07-01

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