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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하
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Showing results 1 to 7 of 7
Article
Characterization of deposition process, microstructure and interfacial states of silicon dioxide film using tetraethylorthosilicate/O-2 with various dilution gasesSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 148, no. 10, page. C679 - C684, 2001-10

Article
Dry etching of copper film with hexafluoroacetylacetone via oxidation processSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 1, page. 154 - 157, 1999-01

Article
Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor depositionSCIESCOPUS

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 11, no. 8, page. 579 - 586, 2000-11

Article
Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate-ozone chemical vapor depositionSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 4, page. 1473 - 1476, 2000-04

Article
Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using N-2/He or O-2/He gasSCIESCOPUS

THIN SOLID FILMS, vol. 408, no. 1-2, page. 252 - 259, 2002-04-03

Article
Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using O-2/He gasSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 19, no. 6, page. 2067 - 2072, 2001-11

Article
The effect of He or Ar/O-2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2SCIESCOPUS

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 15, no. 1, page. 37 - 41, 2004-01

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