Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using O-2/He gas
SCIE
SCOPUS
- Title
- Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using O-2/He gas
- Authors
- Yi, C; Kim, HU; Rhee, SW; Oh, SH; Park, CG
- Date Issued
- 2001-11
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- We studied two-step deposition with an O-2/He intermediate plasma treatment to improve the SiO2/Si interface characteristics. Using this method, we can minimize the plasma damage on the Si surface and improve the interface characteristics such as intermediate oxidation states, interface trap density D-it, and V-fb shift. The interface characteristics were improved with the intermediate plasma treatment after a 6 nm first oxide deposition. The number of Si atoms (N-SiOx) in the suboxide region, compared with the sample without plasma treatment, was decreased 14.7% and a sixfold ring structure became dominant. Interface trap density was decreased from 1.65 X 10(11)/eV cm(2) to 6.87 X 10(10)/eV cm(2) by the oxygen incorporation in the transition region. The moderate oxygen incorporation near the SiO2/Si interface reduced the V-fb shift due to the decrease of the fixed oxide charge. (C) 2001 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19245
- DOI
- 10.1116/1.1412657
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 19, no. 6, page. 2067 - 2072, 2001-11
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