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Showing results 1 to 5 of 5
Article
AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contactSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 3A, page. 1188 - 1193, 2001-03

Article
Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistorSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10

Article
Microstructure-dependent DC set switching behaviors of Ge-Sb-Te-based phase-change random access memory devices accessed by in situ TEMSCIESCOPUS

NPG Asia Materials, vol. 7, 2015-06

Article
Preparation and Evaluation of PLGA-Silica Scaffold with Human Adipose-Derived Stromal Cells for Bone Tissue EngineeringSCIESCOPUSKCI

TISSUE ENGINEERING AND REGENERATIVE MEDICINE, vol. 7, no. 3, page. 291 - 297, 2010-08

Article
Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMTSCIESCOPUS

ELECTRONICS LETTERS, vol. 36, no. 23, page. 1974 - 1975, 2000-11-09

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