Bistaggered Contact Geometry for Symmetric Dual-Gate Organic TFTs
SCIE
SCOPUS
- Title
- Bistaggered Contact Geometry for Symmetric Dual-Gate Organic TFTs
- Authors
- KWON, JIMIN; JUNG, SUNGYEOP; KIM, YUN-HI; JUNG, SUNGJUNE
- Date Issued
- 2019-06
- Publisher
- INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS
- Abstract
- This transaction proposes a symmetric bistaggered dual-gate organic thin-film transistor (TFT) to minimize the difference between the top and bottom channel current characteristics and demonstrates it through experiment and 2-D simulation. In dual-gate organic TFTs, asymmetric top and bottom channel currents are mainly a result of their asymmetric contact geometry. To address this geometric limitation, the contact electrodes were sandwiched between the two organic semiconductor layers to be placed in a staggered position to both top and bottom gates. Two-way current crowding at the bistaggered contact electrodes leads to high-charge injection efficiency in both channels.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/100123
- DOI
- 10.1109/TED.2019.2917013
- ISSN
- 0018-9383
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 7, page. 3118 - 3123, 2019-06
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