LaF3 electrolyte-insulator-semiconductor sensor for detecting fluoride ions
SCIE
SCOPUS
- Title
- LaF3 electrolyte-insulator-semiconductor sensor for detecting fluoride ions
- Authors
- Cho, Hyeonsu; KIM, KIHYUN; MEYYAPPAN, MEYYA; BAEK, CHANG KI
- Date Issued
- 2019-01
- Publisher
- Elsevier BV
- Abstract
- Electrolyte-insulator-semiconductor (EIS) sensor is commonly considered for chemical and biosensing applications due to its small size and simple fabrication method. Here, we demonstrate a fluoride-sensitive EIS sensor using thermally-deposited polycrystalline lanthanum fluoride (poly LaF3) film as sensing membrane, which is cheaper than single-crystal LaF3. The sensing characteristics are analyzed for poly LaF3 layers deposited at different temperatures, and the EIS sensors with the sensing membrane formed at 500 °C exhibit excellent sensing response to fluoride ions with a high sensitivity of 52.3 mV/pF and low limit of detection of 1.9 ppb. This limit of detection is lower than previously reported values in the literatures. In addition, the poly LaF3 film deposited at 500 °C has good stability with a low hysteresis voltage of 5.1 mV and a small drift rate of 0.67 mV/h. These superior metrics come from a rather well crystallized LaF3 structure including denser surface grains, enhanced preferential crystalline (002) plane, and improved stoichiometric composition. Furthermore, the sensors show a good selectivity over other ions such as NO3− and SO42−.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/100324
- DOI
- 10.1016/j.snb.2018.09.094
- ISSN
- 0925-4005
- Article Type
- Article
- Citation
- Sensors and Actuators, B: Chemical, vol. 279, page. 183 - 188, 2019-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.