Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating
SCIE
SCOPUS
- Title
- Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating
- Authors
- Kim, Eunpa; Rho, Junsuk; Ryu, Sang-gil; Hwang, David; Lee, Yoonkyung; Kim, Kyunghoon; Grigoropoulos, Costas
- Date Issued
- 2019-05
- Publisher
- IOP PUBLISHING LTD
- Abstract
- Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires. (c) 2019 The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/101864
- DOI
- 10.7567/1882-0786/ab1713
- ISSN
- 1882-0778
- Article Type
- Article
- Citation
- APPLIED PHYSICS EXPRESS, vol. 12, no. 5, 2019-05
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- There are no files associated with this item.
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