Article
Cited 4 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING SCIE SCOPUS
- Title
- DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING
- Date Issued
- 1989-01-01
- Publisher
- AMER INST PHYSICS
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 65, no. 1, page. 396 - 397, 1989-01-01
- Files in This Item:
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg