Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization
SCIE
SCOPUS
- Title
- Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization
- Authors
- Kwak, JS; Baik, HK; Kim, JH; Lee, SM; Ryu, HJ; Je, JH
- Date Issued
- 1999-05-01
- Publisher
- AMER INST PHYSICS
- Abstract
- In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Angstrom) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films. (C) 1999 American Institute of Physics. [S0021-8979(99)02909-6].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10484
- DOI
- 10.1063/1.370209
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 85, no. 9, page. 6898 - 6903, 1999-05-01
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