Thickness dependence of domain formation in epitaxial PbTiO3 thin films grown on MgO (001) substrates
SCIE
SCOPUS
- Title
- Thickness dependence of domain formation in epitaxial PbTiO3 thin films grown on MgO (001) substrates
- Authors
- Lee, KS; Baik, S
- Date Issued
- 2000-06-01
- Publisher
- AMER INST PHYSICS
- Abstract
- Strain relaxation and its effect on domain formation of epitaxial PbTiO3 thin films grown on MgO (001) substrates were investigated as a function of film thickness by two-dimensional reciprocal space mapping using synchrotron x-ray diffraction. Within a few hundreds of angstrom region, it was observed that c-domain abundance, alpha, was critically dependent on film thickness. As the film thickness increased further, alpha was saturated at a value of similar to 0.75. The HK mesh scan on PbTiO3 (100) reflections revealed that directional tilting of a domains with four-fold symmetry began to develop as the film thickness exceeded 650 Angstrom. Thermodynamic equilibrium relief of the coherency strain was evaluated based on Mattews-Blakslee criteria that determine thickness dependent misfit accommodation. This theoretical consideration with experimental results led us to conclude that the unrelaxed residual misfit strain has a significant effect on the domain formation, particularly in the region below the thickness of 1000 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07109-7].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10493
- DOI
- 10.1063/1.373493
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 87, no. 11, page. 8035 - 8038, 2000-06-01
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