DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, J.-S. | - |
dc.contributor.author | Lee, S. | - |
dc.contributor.author | Lee, J. | - |
dc.contributor.author | Jeong, J. | - |
dc.contributor.author | Yun, H. | - |
dc.contributor.author | Baek, R.-H. | - |
dc.date.accessioned | 2021-12-03T09:22:48Z | - |
dc.date.available | 2021-12-03T09:22:48Z | - |
dc.date.created | 2020-08-13 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/107866 | - |
dc.description.abstract | Process (systematic) variations of sub-5-nm node fin field-effect transistors (FinFETs) and nanosheet field-effect transistors (NSFETs) were investigated thoroughly using fully calibrated TCAD. All the process parameters consisting of front-end-as well as middle-of-line structure were independently randomized within feasible process conditions. A novel process scheme called source/drain patterning (SDP), having a superior performance by decreasing outer fringing capacitance through the downsized source/drain (S/D) epi, has also been analyzed for the variability study. SDP FinFETs have smaller variations of threshold voltages (V-th), OFF-state currents (I-OFF), and effective currents (I-eff) than conventional ones because the subfin leakage is effectively controlled by bottom oxide (BO) beneath the source/drain instead of high punchthrough-stopper doping. The Spearman's correlation results between process parameters, I-OFF, and I-eff, showed that the process parameters affecting the short-channel effects vary I-OFF and I-eff greatly. Especially, the most critical one was the fin width (W-fin) for FinFETs. SDP NSFETs have the smallest variations of V-th, I-OFF, and I-eff. The BO blocks the bottom leakage completely, and the variations of nanosheet (NS) thickness(T-NS) aremuchsmaller than those of W-fin due to the different process flows: epitaxial growth for T-NS versus patterning for W-fin. Therefore, NSFETs are promising to reduce the variations of V-th, I-OFF, and I-eff in the sub-5-nm node. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.title | Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process Scheme | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2020.2995340 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.7, pp.2732 - 2737 | - |
dc.identifier.wosid | 000542842800010 | - |
dc.citation.endPage | 2737 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 2732 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 67 | - |
dc.contributor.affiliatedAuthor | Yoon, J.-S. | - |
dc.contributor.affiliatedAuthor | Lee, J. | - |
dc.contributor.affiliatedAuthor | Yun, H. | - |
dc.contributor.affiliatedAuthor | Baek, R.-H. | - |
dc.identifier.scopusid | 2-s2.0-85087339268 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | Capacitance | - |
dc.subject.keywordPlus | Fins (heat exchange) | - |
dc.subject.keywordPlus | Nanosheets | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Fin field effect transistors | - |
dc.subject.keywordPlus | Fringing capacitance | - |
dc.subject.keywordPlus | Off-state current | - |
dc.subject.keywordPlus | Process condition | - |
dc.subject.keywordPlus | Process parameters | - |
dc.subject.keywordPlus | Process schemes | - |
dc.subject.keywordPlus | Process Variation | - |
dc.subject.keywordPlus | Short-channel effect | - |
dc.subject.keywordPlus | FinFET | - |
dc.subject.keywordAuthor | Contribution | - |
dc.subject.keywordAuthor | dc | - |
dc.subject.keywordAuthor | fin | - |
dc.subject.keywordAuthor | nanosheet (NS) | - |
dc.subject.keywordAuthor | process (systematic) variations | - |
dc.subject.keywordAuthor | Spearman&apos | - |
dc.subject.keywordAuthor | s correlation | - |
dc.subject.keywordAuthor | sub-5-nm node | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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