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BAEK, ROCK HYUN(백록현) scopus

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-20 of 49 (Search time: 0.003 seconds).

Article

Improved ISPP scheme for narrow threshold voltage distribution in 3-D NAND flash memorySCIESCOPUS

Solid-State Electronics, vol. 202, page. 108607, 2023-04

Article

Novel High-Speed Ternary Logic Using Step-Shaped Threshold SwitchSCIESCOPUS

IEEE Electron Device Letters, vol. 44, no. 3, page. 368 - 371, 2023-03

Article

H2 Plasma and PMA Effects on PEALD-Al2O3 Films with Different O2 Plasma Exposure Times for CIS Passivation LayersSCIESCOPUS

Nanomaterials, vol. 13, no. 4, page. 731, 2023-02

Article

Nanowire Diameter Dependency of the Variability in n/p Silicon Nanowire FETs With Ultrashort Gate Length of 15 nmSCIESCOPUS

IEEE Transactions on Electron Devices, vol. 69, no. 12, page. 6529 - 6534, 2022-12

Article

Learning-Based Ordering Characters on Ancient DocumentSCIESCOPUS

COMPUTATIONAL INTELLIGENCE AND NEUROSCIENCE, vol. 2022, 2022-11

Article

A Review of Multi-Modal Learning from the Text-Guided Visual Processing ViewpointSCIESCOPUS

Sensors, vol. 22, no. 18, page. 6816, 2022-09

Article

Extraction of Device Structural Parameters Through DC/AC Performance Using an MLP Neural Network AlgorithmSCIESCOPUS

IEEE Access, vol. 10, page. 64408 - 64419, 2022-06

Article

Effect of hydrogen plasma treatment on the electrical properties for SiC-based power MOSFETsSCIESCOPUS

Microelectronic Engineering, vol. 258, 2022-04

Article

Arbitrary Font Generation by Encoder Learning of Disentangled FeaturesSCIESCOPUS

Sensors, vol. 22, no. 6, page. 2374, 2022-03

Article

DC Performance Variations by Grain Boundary in Source/Drain Epitaxy of Sub-3-nm Nanosheet Field-Effect TransistorsSCIESCOPUS

IEEE ACCESS, vol. 10, page. 22032 - 22037, 2022-02

Article

Monolithic 3D 6T-SRAM Based on Newly Designed Gate and Source/Drain Bottom Contact SchemesSCIESCOPUS

IEEE ACCESS, vol. 9, page. 138192 - 138199, 2021-10

Article

Demonstration of TiO2 Based Ultra High-k (k = 30) Metal-Insulator–Semiconductor Capacitor and Its Electrical PropertiesSCIE

Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, page. 4394 - 4399, 2021-08

Article

TCAD-Based Flexible Fin Pitch Design for 3-nm Node 6T-SRAM Using Practical Source/Drain Patterning SchemeSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 68, no. 3, page. 1031 - 1036, 2021-03

Article

A Novel Sub-5-nm Node Dual-Workfunction Folded Cascode Nanosheet FETs for Low Power Mobile ApplicationsSCIESCOPUS

IEEE ACCESS, vol. 8, page. 196975 - 196978, 2020-10

Article

Neural Network Based Design Optimization of 14-nm Node Fully-Depleted SOI FET for SoC and 3DIC ApplicationsSCIESCOPUS

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, vol. 8, page. 1272 - 1280, 2020-09

Article

Threshold Voltage Variations Induced by Si1-xGex and Si1-xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect TransistorsSCIE

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 20, no. 8, page. 4684 - 4689, 2020-08

Article

Neural Approach for Modeling and Optimizing Si-MOSFET ManufacturingSCIESCOPUS

IEEE ACCESS, vol. 8, page. 159351 - 159370, 2020-08

Article

Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process SchemeSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 7, page. 2732 - 2737, 2020-07

Article

Improved Long-Term Responses of Au-Decorated Si Nanowire FET Sensor for NH3 DetectionSCIESCOPUS

IEEE SENSORS JOURNAL, vol. 20, no. 5, page. 2270 - 2277, 2020-03

Article

Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC ApplicationSCIESCOPUS

IEEE ACCESS, vol. 8, page. 35873 - 35881, 2020-02

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