Light extraction in GaInN light-emitting diodes using diffuse omnidirectional reflectors
SCIE
SCOPUS
- Title
- Light extraction in GaInN light-emitting diodes using diffuse omnidirectional reflectors
- Authors
- Kim, JK; Luo, H; Xi, YG; Shah, JM; Gessmann, T; Schubert, EF
- Date Issued
- 2006-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- A theoretical and experimental analysis of light extraction in GaInN light-emitting diodes (LEDs) employing diffuse omnidirectional reflectors is presented. The diffuse omnidirectional reflector consists of GaN, a Ni/Au current spreading layer, a SiO2 layer roughened by Ar ion etching, and a Ag layer. Randomly distributed polystyrene spheres are used as an etch mask. The diffusely reflected power is enhanced by two orders of magnitude for a roughened reflector surface compared with a planar surface. The GaInN LEDs with diffuse omnidirectional reflectors show a higher light output (>3.3%) and a lower angular dependence of emission than LEDs with specular reflectors. The enhancement is attributed to reduced trapping of light within the high-index GaN semiconductor. (c) 2005 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11156
- DOI
- 10.1149/1.2137647
- ISSN
- 0013-4651
- Article Type
- Article
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 153, no. 2, page. G105 - G107, 2006-01
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.