Graphene Growth and Optimizing Etching Process of SiC Substrates

Abstract

Graphene, which consists of a single atomic layer of carbon atoms, has been attracting great attention as a base material for next-generation electronic devices. It is essential to grow highquality graphene in a large area in order to realize graphene-based electronic devices for mass production. One of the methods is to grow graphene from a single crystalline 4H SiC(0001) substrate, which is known as a method for large-scale growth. In this method we can get graphene in a large area. Also, because of a wide band gap of SiC, graphene doesn`t have to be transferred to other substrates like SiO2.