300-GHz. 100-Gb/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer
- Title
- 300-GHz. 100-Gb/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer
- Authors
- SONG, HO JIN; Hamada, Hiroshi; Fujimura, Takuya; Abdo, Ibrahim; Okada, Kenichi; Sugiyama, Hiroki; Matsuzaki, Hideaki; Nosaka, Hideyuki
- Date Issued
- 2018-06
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- This paper presents a 300-GHz transceiver based on 80-nm InP-HEMT technology. To improve the signal-to-noise-and-distortion-ratio (SNDR) characteristics, a high-isolation fundamental mixer is used in which the matching networks are designed for good RF/IF isolation to simultaneously achieve high conversion gain and feasible module packaging. The measured conversion gain of the fabricated mixer module is -15 pm 2\dB, where the LO frequency, IF, and RF are 270, 2-32, and 272-302 GHz. The 300-GHz transceiver consists of the high-isolation mixer, 300-GHz amplifiers, and commercially available frequency multipliers as the LO source. It achieves 100-Gb/s wireless data transmission using 16QAM over a distance of 2.22 m with a 50-dBi antenna. To the best of the authors' knowledge, this is the highest wireless data rate ever achieved using only electronic devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/112554
- Article Type
- Conference
- Citation
- 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018, page. 1480 - 1483, 2018-06
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