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In0.5Ga0.5P/In0.22Ga0.78As/GaAs pseudomorphic high electron mobility transistor with gate oxide layer for improving on-state and off-state breakdown voltages
- Title
- In0.5Ga0.5P/In0.22Ga0.78As/GaAs pseudomorphic high electron mobility transistor with gate oxide layer for improving on-state and off-state breakdown voltages
- Authors
- SONG, HO JIN; Lee, J. W.; Kang, I. H.; Kang, S. J.; Jo, S. J.; In, S. K.; Kim, J. H.; Song, J. I.
- Date Issued
- 2001-12
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- We report, for the first time to our knowledge, the characteristics of In
- Article Type
- Conference
- Citation
- International Semiconductor Device Research Symposium, ISDRS 2001, page. 634 - 637, 2001-12
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Related Researcher
- 송호진SONG, HO JIN
- Dept of Electrical Enginrg