Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory
SCIE
SCOPUS
- Title
- Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory
- Authors
- GILSANG, YOONGILSANG; GO, DONGHYUN; PARK, JOUNG HUN; KIM, DONGHWI; Kim, Jungsik; LEE, JEONG SOO
- Date Issued
- 2022-06
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and sensing technique was used to obtain the distribution of traps in these layers. In the BE-TOX layer, significant traps were generated around 1.3 eV in the nitrogen-doped layer (N1) and increased by 48% in the fresh cell after P/E stress-cycling. The H bonds in the N1 are more likely to break during the stress-cycling and create neutral SiO traps. In the block layer, however, trap generation was negligible after stress-cycling.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/116161
- DOI
- 10.1109/access.2022.3182397
- ISSN
- 2169-3536
- Article Type
- Article
- Citation
- IEEE Access, vol. 10, page. 62423 - 62428, 2022-06
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.