Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy

Abstract

<jats:p> To maximize the multilevel data storage capability for high-density memory applications, precise control of quantized conduction with ultralow transition energy is required. We report the quantized conduction in Ag/Ag<jats:sub>2</jats:sub>S/vacuum conductive-bridge random access memory under various pulse conditions to regulate atomic motion at room temperature. Using stochastic analysis, we unveil a pulse condition for supplying the optimal energy that allows precise atom detachment and has a high dissolution probability. In addition, we calculate the transition energy required to change each quantized state for an Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> electrolyte and vacuum gap. We determine a large transition energy of Ag in Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> (8–1 mJ), hindering the precise control of quantized conduction, whereas the transition energy of Ag in vacuum is relatively low (397–95 nJ), enabling proper atomic motion. </jats:p>