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INTERACTION OF LOW-ENERGY OXYGEN IONS WITH THE SI(100) SURFACE SCIE SCOPUS

Title
INTERACTION OF LOW-ENERGY OXYGEN IONS WITH THE SI(100) SURFACE
Authors
Chung, J. W.Baek, D. H.Kim, B. O.Yeom, H. W.Kim, C. Y.Jeong, J. I.Shin, H. J.
Date Issued
1992-01-15
Publisher
AMERICAN PHYSICAL SOC
Abstract
The local atomic-bond structures in amorphous SiO2 films prepared by a nonthermal method have been investigated by electron-energy-loss spectroscopy (EELS). The method utilizes oxygen ions of energy below 600 eV impinging on Si(100) surfaces at room temperature. The results, based on an augmented-central-force model, reveal that the Si-O bond nature in the films strongly resembles a typical thermal SiO2 glass. The contribution of noncentral forces to the local Si-O bonding, in terms of the ratio of noncentral-to-central force constants beta/alpha, is estimated by reducing the low-frequency EELS vibrational band (HBAR less-than-or-equal-to 80 meV). The ratio is found to be rather temperature insensitive but increases with film thickness, in the range 0.13 < beta/alpha < 0.19. We also observe thermally activated migration of oxygen atoms in the films with an activation energy barrier of about 0.22 eV.
URI
https://oasis.postech.ac.kr/handle/2014.oak/11967
DOI
10.1103/PhysRevB.45.1705
ISSN
1098-0121
Article Type
Article
Citation
PHYSICAL REVIEW B, vol. 45, no. 4, page. 1705 - 1711, 1992-01-15
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