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dc.contributor.authorBAEK, ROCK HYUN-
dc.contributor.author정진수-
dc.contributor.author이상욱-
dc.contributor.author이승환-
dc.contributor.author이준종-
dc.contributor.author임재완-
dc.date.accessioned2024-01-23T00:26:29Z-
dc.date.available2024-01-23T00:26:29Z-
dc.date.created2023-12-19-
dc.date.issued2023-09-08-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/119824-
dc.languageEnglish-
dc.publisher2023 SSDM-
dc.relation.isPartOf2023 International Conference on Solid State Devices and Materials (SSDM)-
dc.titleHolistic Analysis of Asymmetry in Vertical Silicon Gate-all-around Nanosheet FETs-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2023 International Conference on Solid State Devices and Materials (SSDM)-
dc.citation.conferenceDate2023-09-05-
dc.citation.conferencePlaceJA-
dc.citation.title2023 International Conference on Solid State Devices and Materials (SSDM)-
dc.contributor.affiliatedAuthorBAEK, ROCK HYUN-
dc.contributor.affiliatedAuthor정진수-
dc.contributor.affiliatedAuthor이상욱-
dc.contributor.affiliatedAuthor이승환-
dc.contributor.affiliatedAuthor이준종-
dc.contributor.affiliatedAuthor임재완-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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