Open Access System for Information Sharing

Login Library

 

Article
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Hydrogen Plasma-Assisted Atomic Layer Deposition of Ru with Low Oxygen Content SCIE KCI

Title
Hydrogen Plasma-Assisted Atomic Layer Deposition of Ru with Low Oxygen Content
Authors
Park, GeonwooKim, KeunhoiShin, Jeong WooHan, GeonguGo, DohyunAn, Jihwan
Date Issued
2024-03
Publisher
한국화학공학회
Abstract
Ru is extensively used in electrical and energy applications because of its high electrical conductivity and catalytic activity. This study reports the H 2 plasma-enhanced atomic layer deposition (PEALD) of Ru thin fi lms using a novel carbonyl cyclohexadiene ruthenium precursor. The optimized process conditions for depositing Ru thin fi lms by PEALD were established based on the growth per cycle (GPC), chemical formation, crystallinity, conformality, and resistivity, according to process parameters such as precursor pulse time, H 2 plasma pulse time, purge time, and deposition temperature. Pure Ru thin fi lms (low carbon and oxygen) were deposited with low resistivity (30.8 μΩ cm) and showed high conformality (> 95%) on the Si trenches. The oxidant-free PEALD Ru process reported in this study may have implications on the fabrication of high-quality interfaces between Ru and easily-oxidized substrates.
URI
https://oasis.postech.ac.kr/handle/2014.oak/120879
DOI
10.1007/s11814-024-00035-2
ISSN
0256-1115
Article Type
Article
Citation
Korean Journal of Chemical Engineering, vol. 41, no. 4, page. 1249 - 1254, 2024-03
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

안지환AN, JIHWAN
Dept of Mechanical Enginrg
Read more

Views & Downloads

Browse