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Reliable HZO (0.5) Based Ferroelectric Memory with Ultra-low Operation Voltage of 1.1V by Synergy Effect of Thickness Scaling and Microwave Annealing
- Title
- Reliable HZO (0.5) Based Ferroelectric Memory with Ultra-low Operation Voltage of 1.1V by Synergy Effect of Thickness Scaling and Microwave Annealing
- Authors
- MOSTAFA, HABIBI; JANG, HO JUNG; Azaripour Masouleh, Pendar; LEE, KYUMIN; OH, SEUNGYEOL; HWANG, HYUNSANG
- Date Issued
- 2024-01-26
- Publisher
- 포항공대, 한국반도체산업협회, 한국반도체연구조합
- Article Type
- Conference
- Citation
- 제 31회 한국반도체학술대회, 2024-01-26
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