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Superior retention (>1 year, 85 °C) and memory window (~1.8 V) using ultra-thin HZO FTJ with OTS selector for X-point memory applications
- Title
- Superior retention (>1 year, 85 °C) and memory window (~1.8 V) using ultra-thin HZO FTJ with OTS selector for X-point memory applications
- Date Issued
- 2023-12-12
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- We present excellent nonvolatile memoiy characteristics using an ultra-thin Hf
- Article Type
- Conference
- Citation
- 2023 International Electron Devices Meeting, IEDM 2023, 2023-12-12
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