DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jiye | - |
dc.contributor.author | Doh, Kyung-Yeon | - |
dc.contributor.author | Moon, Seokho | - |
dc.contributor.author | Choi, Chang-Won | - |
dc.contributor.author | Jeong, Hokyeong | - |
dc.contributor.author | Kim, Jaewon | - |
dc.contributor.author | Yoo, Wonseok | - |
dc.contributor.author | Park, Kyungwook | - |
dc.contributor.author | Chong, Kyeongock | - |
dc.contributor.author | Chung, Chunhyng | - |
dc.contributor.author | Choi, Hanmei | - |
dc.contributor.author | Choi, Si-Young | - |
dc.contributor.author | Lee, Donghwa | - |
dc.contributor.author | Kim, Jong Kyu | - |
dc.date.accessioned | 2024-06-20T08:21:27Z | - |
dc.date.available | 2024-06-20T08:21:27Z | - |
dc.date.created | 2023-04-20 | - |
dc.date.issued | 2023-03 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/123710 | - |
dc.description.abstract | We successfully accomplished the conformal growth of sp2- hybridized few-layer h-BN over an array of Si-based nanotrenches with a 45 nm pitch and an aspect ratio of similar to 7:1 by using the pulsed-mode metal- organic chemical vapor deposition (MOCVD) method. Surface-sensitive X-ray absorption fine structure spectroscopy and density functional theory calculations revealed that the B-O bonds formed on the noncatalytic SiO2 surface act as nucleation sites for the subsequential formation of mixed sp2- and sp3-hybridized BON2 and BN3 at the very initial stage of the pulsed-mode injection of MOCVD precursors, enabling the conformal growth of few-layer sp2-hybridized h-BN with an excellent step coverage. We believe that these results can provide a broad avenue for the implementation of fascinating two-dimensional layered materials for current state-of-the-art three-dimensional Si-based nanoscale architectures, overcoming the downscaling limits. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | CHEMISTRY OF MATERIALS | - |
dc.title | Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.chemmater.2c03568 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.35, no.6, pp.2429 - 2438 | - |
dc.identifier.wosid | 000954017200001 | - |
dc.citation.endPage | 2438 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2429 | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 35 | - |
dc.contributor.affiliatedAuthor | Kim, Jiye | - |
dc.contributor.affiliatedAuthor | Doh, Kyung-Yeon | - |
dc.contributor.affiliatedAuthor | Moon, Seokho | - |
dc.contributor.affiliatedAuthor | Choi, Chang-Won | - |
dc.contributor.affiliatedAuthor | Jeong, Hokyeong | - |
dc.contributor.affiliatedAuthor | Kim, Jaewon | - |
dc.contributor.affiliatedAuthor | Choi, Si-Young | - |
dc.contributor.affiliatedAuthor | Lee, Donghwa | - |
dc.contributor.affiliatedAuthor | Kim, Jong Kyu | - |
dc.identifier.scopusid | 2-s2.0-85150450585 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ABSORPTION FINE-STRUCTURE | - |
dc.subject.keywordPlus | H-BN | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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