Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches
SCIE
SCOPUS
- Title
- Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches
- Authors
- Kim, Jiye; Doh, Kyung-Yeon; Moon, Seokho; Choi, Chang-Won; Jeong, Hokyeong; Kim, Jaewon; Yoo, Wonseok; Park, Kyungwook; Chong, Kyeongock; Chung, Chunhyng; Choi, Hanmei; Choi, Si-Young; Lee, Donghwa; Kim, Jong Kyu
- Date Issued
- 2023-03
- Publisher
- AMER CHEMICAL SOC
- Abstract
- We successfully accomplished the conformal growth of sp2- hybridized few-layer h-BN over an array of Si-based nanotrenches with a 45 nm pitch and an aspect ratio of similar to 7:1 by using the pulsed-mode metal- organic chemical vapor deposition (MOCVD) method. Surface-sensitive X-ray absorption fine structure spectroscopy and density functional theory calculations revealed that the B-O bonds formed on the noncatalytic SiO2 surface act as nucleation sites for the subsequential formation of mixed sp2- and sp3-hybridized BON2 and BN3 at the very initial stage of the pulsed-mode injection of MOCVD precursors, enabling the conformal growth of few-layer sp2-hybridized h-BN with an excellent step coverage. We believe that these results can provide a broad avenue for the implementation of fascinating two-dimensional layered materials for current state-of-the-art three-dimensional Si-based nanoscale architectures, overcoming the downscaling limits.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/123710
- DOI
- 10.1021/acs.chemmater.2c03568
- ISSN
- 0897-4756
- Article Type
- Article
- Citation
- CHEMISTRY OF MATERIALS, vol. 35, no. 6, page. 2429 - 2438, 2023-03
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