Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric

Abstract

We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (similar to 1.63 cm(2) V(-1) s(-1)), and a greatly enhanced on/off ratio (similar to 10(4)). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain similar to 12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.