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Strong Correlation between Capacitance and Breakdown Voltage of GaInN/GaN Light-Emitting Diodes SCIE SCOPUS KCI

Title
Strong Correlation between Capacitance and Breakdown Voltage of GaInN/GaN Light-Emitting Diodes
Authors
Cho, JSchubert, EFSon, JKKim, DYKim, JK
Date Issued
2014-11
Publisher
KOREAN INST METALS MATERIALS
Abstract
Investigating the relationship between the breakdown voltage and the capacitance of GaInN light-emitting diodes (LEDs), we fmd that a lower capacitance due to weaker internal electric field in depletion region or wider depletion width at the pn junction results in lower reverse leakage current and thus larger breakdown voltage. The measured breakdown voltage and capacitance of LEDs show a strong correlation, opening a nondestructive and non-intrusive way to estimate the breakdown voltage of an LED based on the capacitance-voltage measurement.
URI
https://oasis.postech.ac.kr/handle/2014.oak/13827
DOI
10.1007/S13391-014-4008-7
ISSN
1738-8090
Article Type
Article
Citation
ELECTRONIC MATERIALS LETTERS, vol. 10, no. 6, page. 1155 - 1157, 2014-11
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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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