Effect of Reflective P-Type Ohmic Contact on Thermal Reliability of Vertical InGaN/GaN LEDs
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- Title
- Effect of Reflective P-Type Ohmic Contact on Thermal Reliability of Vertical InGaN/GaN LEDs
- Authors
- Son, JH; Song, YH; Kim, BJ; Lee, JL
- Date Issued
- 2014-11
- Publisher
- KOREAN INST METALS MATERIALS
- Abstract
- We report on the enhanced thermal reliability of vertical-LEDs (V-LEDs) using novel reflective p-type ohmic contacts with good thermal stability. The reflective p-type ohmic contacts with Ni/Ag-Cu alloy multi-layer structure shows low contact resistivity, as low as 9.3 x 10(-6) Omega cm(2), and high reflectance of 86% after annealing at 450 degrees C. The V-LEDs with Ni/Ag-Cu alloy multi-layer structure show good thermal reliability with stress time at 300 degrees C in air ambient. The improved thermal stability of the reflective ohmic contacts to p-type GaN is believed to play a critical role in the thermal reliability of V-LEDs.
- Keywords
- vertical light-emitting diodes; reflective ohmic contact; Ag agglomeration; thermal stability; LIGHT-EMITTING-DIODES; LOW-RESISTANCE; GAN; AG; STABILITY; DESIGN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14005
- DOI
- 10.1007/S13391-014-4127-1
- ISSN
- 1738-8090
- Article Type
- Article
- Citation
- ELECTRONIC MATERIALS LETTERS, vol. 10, no. 6, page. 1171 - 1174, 2014-11
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