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Filling performance and electrical characteristics of Al2O3 films deposited by atomic layer deposition for through-silicon via applications SCIE SCOPUS
- Title
- Filling performance and electrical characteristics of Al2O3 films deposited by atomic layer deposition for through-silicon via applications
- Date Issued
- 2014-04-01
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- We have evaluated the conformality and electrical properties of Al2O3 films deposited by atomic layer deposition at temperatures below 300 degrees C for through-silicon via (TSV) applications. Al2O3 films were able to be conformally deposited on the scallops of 50-mu m-wide, 100-mu m-deep TSV at the temperature range between 200 and 300 degrees C. The median breakdown fields of the metal-insulator-metal device with 30-nm-thick Al2O3 layer were above 6 MV/cm for the films deposited at 250 and 300 degrees C, while that at 200 degrees C was inferior due to residual carbon impurities in the oxide layer. (C) 2014 Elsevier B.V. All rights reserved.
- Keywords
- Aluminum oxide; Atomic layer deposition; Through-silicon via; Step coverage; Breakdown field; High-k dielectrics; 3-DIMENSIONAL INTEGRATED-CIRCUITS; BINARY REACTION SEQUENCE; SURFACE-CHEMISTRY; THIN-FILM; CAPACITANCE; GROWTH; H2O
- ISSN
- 0040-6090
- Article Type
- Article
- Citation
- THIN SOLID FILMS, vol. 556, page. 560 - 565, 2014-04-01
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg