Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors
SCIE
SCOPUS
- Title
- Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors
- Authors
- Saungeun Park; Sangchul Lee; Greg Mordi; Srikar Jandhyala; Min-Woo Ha; Ha, MW; Luigi Colombo; Robert M. Wallace; Byoung Hun Lee; Jiyoung Kim; Kim, J
- Date Issued
- 2014-02
- Publisher
- IEEE ELECTRON DEVICE LETTERS
- Abstract
- We use a triangular-pulse measurement technique to obtain the hysteretic electrical characteristics of flexible graphene field-effect transistors (GFETs). To minimize charge trapping, the gate-voltage scanning rate was controlled (up to 2 V/mu s) by varying the triangular-pulse rise and fall times. This method makes it possible to measure the intrinsic-like transfer characteristics of chemical vapor deposition graphene devices. The maximum electron (hole) mobility measured by a dc measurement is similar to 4800 (5200) cm(2)/Vs, whereas the maximum electron (hole) mobility measured by the triangular-pulse technique with a gate-voltage scanning rate of 0.4 V/mu s is similar to 10 600 (8500) cm(2)/Vs. For measurements with a triangular gate pulse, the shift of the Dirac voltage is less than that measured by the dc method. These results indicate that the triangular-gate-pulse measurement is a promising technique with which to determine the intrinsic properties and ambipolar transfer characteristics of GFETs.
- Keywords
- Ambipolar transfer characteristics; chemical vapor deposited graphene; charge trapping; flexible electronics; pulse measurement; hysteresis; SIO2
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14546
- DOI
- 10.1109/LED.2013.2294828
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 2, page. 277 - 279, 2014-02
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- There are no files associated with this item.
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