Improved Electrical Characteristics of Honeycomb-Nanowire ISFETs

Abstract

Ion-sensitive field-effect transistors (ISFETs) with a honeycomb nanowire (HCNW) structure have been fabricated on a silicon-on-insulator wafer. The HCNW ISFET shows lower threshold voltage, lower subthreshold swing, higher drain current, and lower variability than the conventional nanowire device. Improved electrical characteristics are mainly due to the increased effective channel width and enhanced current drivability. The HCNW structure also exhibits improved current sensitivity in its pH response. These results suggest that the HCNW structure is promising for enhancing device performance and realizing sensors with high sensitivity.