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Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications SCIE SCOPUS
- Title
- Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications
- Authors
- Park, S; Jung, S; Siddik, M; Jo, M; Park, J; Kim, S; Lee, W; Shin, J; Lee, D; Choi, G; Woo, J; Cha, E; Lee, BH; Hwang, H
- Date Issued
- 2012-11
- Publisher
- Wiley-VCH Verlag.
- Abstract
- We propose a selector-less Pr0.7Ca0.3MnO3 (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Phi(eff)), i.e., self-formed Schottky barrier. In addition, a scalable 4F(2) selector-less cross-point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high-density memory applications. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Keywords
- cross-point memory; Schottky barrier; Pr0.7Ca0.3MnO3; manganites; resistive switching; RRAM; HIGH-DENSITY
- ISSN
- 1862-6254
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, vol. 6, no. 11, page. 454 - 456, 2012-11
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