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Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress SCIE SCOPUS
- Title
- Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress
- Date Issued
- 2012-09
- Publisher
- Elsvier SCIENCE BV
- Abstract
- Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is investigated. CHC stress generates negative oxide charges while GIDL stress generates positive oxide charges in the gate oxide near drain region. Theses oxide charges degrade device reliability, and degradation is enhanced when CHC stress and GIDL stress are applied alternatively. The degradation under CHC/GIDL alternating stress is due to the neutral traps and interface traps, and increases with the increase in frequency. (C) 2012 Elsevier Ltd. All rights reserved.
- Keywords
- DIELECTRIC STACKS; HFSION; HFO2
- ISSN
- 0026-2714
- Article Type
- Article
- Citation
- Microelectronics Reliability, vol. 52, no. 9-10, page. 1901 - 1904, 2012-09
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg