Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal--Oxide--Semiconductor Inverter at Elevated Temperature
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- Title
- Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal--Oxide--Semiconductor Inverter at Elevated Temperature
- Authors
- Lee, NH; Kim, HW; Kang, B
- Date Issued
- 2012-02
- Publisher
- The Japan Society of Applied Physics
- Abstract
- This paper investigates the impact of dynamic stress on the reliability of a nanoscale n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) with a SiON gate dielectric operating in a complementary metal-oxide-semiconductor (CMOS) inverter at an elevated temperature T. Experimental results indicate that the shift of threshold voltage V-th by dynamic stress is much larger than that by various static stresses in short channel nMOSFETs. Under a dynamic stress, the OFF-state stress generated interface traps and unfilled electron traps because of the OFF-state hot carrier effect due to drain induced barrier lowering (DIBL) at high T. Although the subsequent ON-state did not produce any new defects, it filled the electron traps, which increased the V-th abruptly. Consecutive application of OFF-and ON-state stresses caused a buildup of recoverable and permanent electron traps, and interface traps, thereby resulting in the significant increase in V-th. In addition, the dynamic stress degradation was frequency-independent up to 500 kHz and its impact on nMOSFET lifetime depends strongly on gate lengths. These results indicate that OFF-state induced defects are the main cause for dynamic stress degradation and can impose a significant limitation on CMOS device scaling. (C) 2012 The Japan Society of Applied Physics
- Keywords
- HOT-CARRIER DEGRADATION; VOLTAGE; INSTABILITY; ELECTRON; STACKS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16011
- DOI
- 10.1143/JJAP.51.02BC13
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02
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