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Cited 2 time in webofscience Cited 3 time in scopus
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dc.contributor.authorMikhail Yu. Gutkin-
dc.contributor.authorSheinerman, AG-
dc.contributor.authorKohn, VG-
dc.contributor.authorArgunova, TS-
dc.contributor.authorSmirnov, MA-
dc.contributor.authorJe, JH-
dc.date.accessioned2016-03-31T08:54:52Z-
dc.date.available2016-03-31T08:54:52Z-
dc.date.created2012-11-22-
dc.date.issued2012-08-
dc.identifier.issn1862-6300-
dc.identifier.other2012-OAK-0000025996-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/16295-
dc.description.abstractIt has been generally accepted that any reaction between micropipes in silicon carbide (SiC) crystals requires a direct contact of the micropipes. We propose a new model of contact-free reactions that are realized through the emission and absorption of full-core dislocations by micropipes. This model can explain the correlated reduction in micropipe radii in the samples with low micropipe densities which has been observed in synchrotron radiation (SR) phase contrast images supported by computer simulations. We provide a theoretical description of a contact-free reaction between two parallel micropipes.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWILEY-VCH-
dc.relation.isPartOfPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.subjectcrystal structure-
dc.subjectdefects-
dc.subjectsingle crystal growth-
dc.subjectsynchrotron X-ray diffraction-
dc.subjectSILICON-CARBIDE-
dc.subjectSINGLE-CRYSTALS-
dc.subjectSCREW DISLOCATIONS-
dc.subjectEPITAXIAL LAYERS-
dc.subjectTRANSFORMATION-
dc.subjectREDUCTION-
dc.subjectEVOLUTION-
dc.subjectDEFECTS-
dc.titleContact-free reactions between micropipes in bulk SiC growth-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1002/PSSA.201127682-
dc.author.googleGutkin, MY-
dc.author.googleSheinerman, AG-
dc.author.googleKohn, VG-
dc.author.googleArgunova, TS-
dc.author.googleSmirnov, MA-
dc.author.googleJe, JH-
dc.relation.volume209-
dc.relation.issue8-
dc.relation.startpage1432-
dc.relation.lastpage1437-
dc.contributor.id10123980-
dc.relation.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.209, no.8, pp.1432 - 1437-
dc.identifier.wosid000307548600005-
dc.date.tcdate2019-01-01-
dc.citation.endPage1437-
dc.citation.number8-
dc.citation.startPage1432-
dc.citation.titlePHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.citation.volume209-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-84865020562-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc1-
dc.description.scptc1*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusSILICON-CARBIDE-
dc.subject.keywordPlusSINGLE-CRYSTALS-
dc.subject.keywordPlusSCREW DISLOCATIONS-
dc.subject.keywordPlusEPITAXIAL LAYERS-
dc.subject.keywordPlusTRANSFORMATION-
dc.subject.keywordPlusREDUCTION-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordAuthorcrystal structure-
dc.subject.keywordAuthordefects-
dc.subject.keywordAuthorsingle crystal growth-
dc.subject.keywordAuthorsynchrotron X-ray diffraction-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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