Effect of OFF-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature
SCIE
SCOPUS
- Title
- Effect of OFF-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature
- Authors
- Lee, NH; Baek, D; Kang, B
- Date Issued
- 2011-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- This paper investigates the degradation mechanism of a nanoscale n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) that is subjected to OFF-state stress at high temperature and the impact of stress-induced defects on threshold voltage V(th) during drain relaxation. Experimental results indicate that acceptor-like interface traps N(it), positive oxide charges Q(ox), and neutral electron traps were generated by the OFF-state stress. Although the N(it) generated by the OFF-state stress caused an increase in V(th), it did not influence V(th) during drain relaxation at a positive gate voltage. Drain relaxation filled the neutral electron traps and neutralized positive Q(ox)'s, which increased V(th) and decreased the OFF-current significantly. This new observation suggests that the OFF-state stress-induced defects in a nanoscaled nMOSFET should be seriously taken in evaluating the reliability of inverter circuits.
- Keywords
- Electron trap; high temperature; interface trap; metal-oxide-semiconductor field-effect transistor (MOSFET); OFF-state stress; positive oxide charge; INDUCED MOSFET DEGRADATION; LEAKAGE CURRENT; P-MOSFETS; ELECTRON; TRANSISTORS; GENERATION; DEPENDENCE; MODEL; BIAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17275
- DOI
- 10.1109/LED.2011.2145350
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 7, page. 856 - 858, 2011-07
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