Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate
SCIE
SCOPUS
- Title
- Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate
- Authors
- Yu, HK; Baik, JM; Lee, JL
- Date Issued
- 2011-06
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Epitaxial growth of ZnO film on Si(111) substrates using an MgO interfacial layer has been investigated. The MgO layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si, producing a clear interface. A domain-matched structure with mixed 4/3 and 5/4 domains was formed at the interface of Si and MgO to achieve the lowest domain mismatch. Moreover, the epitaxial ZnO film was grown on a MgO buffer layer with a domain matched structure of 11/12 domains, resulting in an (0001)[1 (2) over bar 10](ZnO)parallel to(111)[1 (1) over bar0](MgO)parallel to(111)[1 (1) over bar0](Si) epitaxial relation, The high crystallinity of ZnO film grown on MgO/Si shows good optical performance with strong photoluminescence and improved Hall mobility.
- Keywords
- BUFFER LAYER; FILM; GAN; CONTACT; SILICON
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17337
- DOI
- 10.1021/CG200203S
- ISSN
- 1528-7483
- Article Type
- Article
- Citation
- CRYSTAL GROWTH & DESIGN, vol. 11, no. 6, page. 2438 - 2443, 2011-06
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- There are no files associated with this item.
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