Characteristics and modeling of a nonplanar nonrectangular metal oxide semiconductor field effect transistor for charge sensing in the Si micro-fluidic channel
SCIE
SCOPUS
- Title
- Characteristics and modeling of a nonplanar nonrectangular metal oxide semiconductor field effect transistor for charge sensing in the Si micro-fluidic channel
- Authors
- Lim, G; Kim, DS; Lyu, HK; Park, HJ; Shin, JK; Choi, P; Lee, JH; Lee, M
- Date Issued
- 2004-06
- Publisher
- INST PURE APPLIED PHYSICS
- Abstract
- In this work, a nonplanar, nonrectangular metal-oxide-semiconductor field effect transistor (MOSFET) with an asymmetrical channel structure for sensing charge in the Si micro-fluidic channel was fabricated, and the electrical characteristics of the fabricated three-dimensional (3-D) MOSFET were measured. The device was formed in the convex corner of a Si micro-fluidic channel using tetramethyl ammonium hydroxide (TMAH) anistropic etching solution, so that it would be suitable for combination with a micro-fluidic system. We approximated the nonplanar, nonrectangular 3-D MOSFET to a two-dimensional rectangular structure using the Schwartz-Christoffel transformation. The LEVEL1 device parameters of the 3-D MOSFET were extracted from the measured electrical device characteristics and were used in a simulation program with integrated circuit emphasis (SPICE) simulation. The measured and simulated results for the 3-D MOSFET were compared and found to show good agreement. We also investigated the feasibility of the proposed 3-D MOSFET as a charge sensor for detecting charged biomolecules.
- Keywords
- 3-D MOSFET; Si micro-fluidic channel; Schwartz-Christoffel transformation; charge sensor; SENSOR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17823
- DOI
- 10.1143/JJAP.43.3896
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 43, no. 6B, page. 3896 - 3900, 2004-06
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