Surface treatment for enhancing current gain of AlGaAs/GaAs heterojunction bipolar transistor
SCIE
SCOPUS
- Title
- Surface treatment for enhancing current gain of AlGaAs/GaAs heterojunction bipolar transistor
- Authors
- Oh, TK; Baek, CH; Kang, BK
- Date Issued
- 2004-09
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- This paper presents a method of surface treatment for improving the current gain of an AlGaAs/GaAs heterojunction bipolar transistor (HBT). Several recipes for GaAs surface treatment, including each and several combinations of the H, plasma, NH3 plasma, and (NH4)(2)S-x chemical treatments are examined. The lowest SiO2/GaAs interface state density of 1.23 x 10(10) cm(-2) eV(-1) is obtained when the GaAs surface is treated in sequence with (NH4)(2)S-x:H2O = 1:1 solution, H-2 plasma, and NH3 plasma. The current gain of an AlGaAs/GaAs HBT, whose extrinsic base surface is treated with this recipe, is enhanced at a low collector current by a factor of 2.5 from that without surface treatment. The maximum current gain is also enhanced by a factor of 1.37. (C) 2004 Elsevier Ltd. All rights reserved.
- Keywords
- surface passivation; surface treatment; heterojunction bipolar transistor; metal insulator capacitor; X-ray photoelectron spectroscopy; PLASMA PASSIVATION; HYDROGEN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17831
- DOI
- 10.1016/J.SSE.2004.0
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 48, no. 9, page. 1549 - 1553, 2004-09
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- There are no files associated with this item.
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