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Recoverable residual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays SCIE SCOPUS

Title
Recoverable residual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays
Authors
Kim, BKKim, OChung, HJChang, JWHa, YM
Date Issued
2004-04-01
Publisher
INST PURE APPLIED PHYSICS
Abstract
A recoverable residual image is observed and analyzed in voltage driven active matrix organic light emitting diode (AMOLED) displays of which pixel circuits consist of two thin film transistors (TFTs) and one capacitor. The cause of the residual image is proven to be the hysteresis of the driving TFT in the pixel. The hysteresis of the p-channel TFT can be explained by hole trapping and de-trapping at the interface region of the channel. The recovery time of the residual image also strongly depends on the hysteresis level. We have found that the residual image can be eliminated by reducing the hysteresis level of TFTs.
Keywords
thin film transistor; organic light emitting diode; active matrix; polysilicon; AMOLED; hysteresis; residual image; ELECTROLUMINESCENT DEVICES
URI
https://oasis.postech.ac.kr/handle/2014.oak/17898
DOI
10.1143/JJAP.43.L482
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, vol. 43, no. 4A, page. L482 - L485, 2004-04-01
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김오현KIM, OHYUN
Dept of Electrical Enginrg
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