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KIM, OHYUN(김오현)

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-20 of 73 (Search time: 0.002 seconds).

Article

Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film TransistorsSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 216, no. 4, 2019-02

Article

Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistorsSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 152, page. 53 - 57, 2019-02

Article

Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistorsSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 137, page. 22 - 28, 2017-11

Article

Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 56, no. 10, 2017-10

Article

Effect of illumination on the hump phenomenon in I?V characteristics of amorphous InGaZnO TFTs under positive gate-bias stressSCIESCOPUS

Physica Status Solidi (A) Applications and Materials Science, vol. 214, no. 5, 2017-05

Article

Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination StressSCIESCOPUS

ECS Journal of Solid State Science and Technology, vol. 6, no. 1, page. Q6 - Q9, 2017-01

Article

Effect of Rising Edge during Dynamic Stress With Duty Ratio in Amorphous InGaZnO Thin Film TransistorsSCIESCOPUS

Journal of DisplayTecjnology, vol. 12, no. 10, page. 1078 - 1082, 2016-10

Article

Highly Robust Integrated Gate-Driver for In-Cell Touch TFT-LCD Driven in Time Division Driving MethodSCIESCOPUS

JOURNAL OF DISPLAY TECHNOLOGY, vol. 12, no. 5, page. 435 - 441, 2016-05

Article

Improving graphene non-volatile memory using self-aligned gateSCIESCOPUS

Electronics Letters, vol. 52, no. 9, page. 742 - 743, 2016-04-28

Article

New Analytical Drain Current Model for the Sub-Linear Region of Output Characteristics of Graphene Field-Effect Transistors in the Low Carrier Density LimitSCIESCOPUS

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 14, no. 12, page. 9082 - 9087, 2014-12

Article

Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 6, 2014-06

Article

Effects of Substrate on Piezoelectricity of Electrospun Poly(vinylidene fluoride)-Nanofiber-Based Energy GeneratorsSCIESCOPUS

ACS APPLIED MATERIALS & INTERFACES, vol. 6, no. 5, page. 3520 - 3527, 2014-03-12

Article

A Technique for the Non-Destructive EUV Mask Sidewall Angle Measurement Using Scanning Electron MicroscopeSCIESCOPUS

Jounal of Nanoscience and Nanotecnology, vol. 13, no. 12, page. 8032 - 8035, 2013-12

Article

Highly Efficient Hybrid Energy Generator: Coupled Organic Photovoltaic Device and Randomly Oriented Electrospun Poly(vinylidene fluoride) NanofiberSCIESCOPUS

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 13, no. 3, page. 2236 - 2241, 2013-03

Article

Enhancement of piezoelectricity via electrostatic effects on a textile platformSCIESCOPUS

Energy&Environmental Science, vol. 5, no. 10, page. 8932 - 8936, 2012-10

Article

Optimized Multigrid Strategy for Accurate Flare Modeling with Three-Dimensional Mask Effect in Extreme-Ultraviolet LithographySCIESCOPUS

Japaness Journal of Applied Physics, vol. 51, no. 6, page. 6FB06, 2012-06

Article

Process optimization for synthesis of high-quality graphene films by low-pressure chemical vapor depositionSCIESCOPUS

Japanese Journal of Applied Physics, vol. 51, no. 6, page. 6FD21-1 - 6FD21-4, 2012-06

Article

Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose IrradiationSCIESCOPUS

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 58, no. 6, page. 2871 - 2875, 2011-12

Article

Perspectives on Nanotechnology for RF and Terahertz ElectronicsSCIESCOPUS

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 59, no. 10, page. 2709 - 2718, 2011-10

Article

Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal-Oxide-Semiconductor Field-Effect TransistorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 6, page. 6GF16, 2011-06

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