The improvement of DC performance in AlGaN-GaNHEFTs with isoelectronic Al-doped channels
SCIE
SCOPUS
- Title
- The improvement of DC performance in AlGaN-GaNHEFTs with isoelectronic Al-doped channels
- Authors
- Jeon, CM; Lee, JH; Lee, JH; Lee, JL
- Date Issued
- 2004-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- Enhancement of electrical properties of an AlGaN-GaN heterostructure was achieved through isoelectronic A1-doping of the undoped channel layer during the growth by metal-organic chemical vapor deposition. The two-dimensional electron gas mobility was increased from 3390 to 4870 cm(2)/V(.)s at 77 K, and the crystal quality was significantly improved as A1 atoms were incorporated in the undoped GaN film. The AlGaN-GaN HFETs were fabricated on this material structure and exhibited a maximum drain current of 909 mA/mm, and a maximum transconductance of 232 mS/mm, corresponding to an increase of 30% and 21%, respectively.
- Keywords
- AlGaN; GaN; heterostructure field-effect transistors (HFETs); isoelectronic doping; PLASMA-ASSISTED MBE; DENSITY; HEMTS; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18049
- DOI
- 10.1109/LED.2004.824246
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 3, page. 120 - 122, 2004-03
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.