Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN
SCIE
SCOPUS
- Title
- Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN
- Authors
- Park, WI; Yi, GC
- Date Issued
- 2004-01-05
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.
- Keywords
- OPTOELECTRONIC DEVICES; ROOM-TEMPERATURE; BAND; PHOTOLUMINESCENCE; EMISSIONS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18105
- DOI
- 10.1002/ADMA.2003057
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 16, no. 1, page. 87 - +, 2004-01-05
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- There are no files associated with this item.
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