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Cited 8 time in webofscience Cited 9 time in scopus
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dc.contributor.authorLee, SY-
dc.contributor.authorHur, SM-
dc.contributor.authorKim, HJ-
dc.contributor.authorYoon, CS-
dc.contributor.authorLee, YT-
dc.contributor.authorKang, IY-
dc.contributor.authorChung, YC-
dc.contributor.authorYi, M-
dc.contributor.authorBok, CK-
dc.contributor.authorKim, O-
dc.contributor.authorAhn, J-
dc.date.accessioned2016-03-31T13:03:15Z-
dc.date.available2016-03-31T13:03:15Z-
dc.date.created2009-02-28-
dc.date.issued2002-06-
dc.identifier.issn0021-4922-
dc.identifier.other2002-OAK-0000002807-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/18964-
dc.description.abstractMo/Si multilayers deposited by sputtering for application to extreme-ultraviolet (EUV) reflectors have been characterized. Si rice the control of d-spacing is critical for achieving higher reflectivity. an effective and accurate d-spacing measurement technology is required. Although cross-sectional transmission electron microscope (TEM) and low-angle X-ray diffraction (XRD) are standard methods for evaluating multilayers. they provide different d-spacing values front each other. Cross-sectional TIN images can allow direct measurement of individual layers and cannot reveal tire optical behavior of the multilayer. On the other hand, low-angle XRD analysis can provide the resultant d-spacing which includes nonideal factors. As a result look-angle XRD can predict the EUV peak position more precisely than TEM analysis.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.subjectEUVL-
dc.subjectNGL-
dc.subjectMo/Si-
dc.subjectmultilayer-
dc.subjectreflectivity-
dc.subjectd-spacing-
dc.subjectRESOLUTION ELECTRON-MICROSCOPY-
dc.subjectMO-SI MULTILAYER-
dc.subjectLITHOGRAPHY-
dc.subjectMIRRORS-
dc.titleAnalysis of multilayer structure for reflection of extreme-ultraviolet wavelength-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1143/JJAP.41.4086-
dc.author.googleLee, SY-
dc.author.googleHur, SM-
dc.author.googleKim, HJ-
dc.author.googleYoon, CS-
dc.author.googleLee, YT-
dc.author.googleKang, IY-
dc.author.googleChung, YC-
dc.author.googleYi, M-
dc.author.googleBok, CK-
dc.author.googleKim, O-
dc.author.googleAhn, J-
dc.relation.volume41-
dc.relation.issue6B-
dc.relation.startpage4086-
dc.relation.lastpage4090-
dc.contributor.id10087230-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.41, no.6B, pp.4086 - 4090-
dc.identifier.wosid000177169700013-
dc.date.tcdate2019-01-01-
dc.citation.endPage4090-
dc.citation.number6B-
dc.citation.startPage4086-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.citation.volume41-
dc.contributor.affiliatedAuthorKim, O-
dc.identifier.scopusid2-s2.0-0036613993-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc7-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusRESOLUTION ELECTRON-MICROSCOPY-
dc.subject.keywordPlusMO-SI MULTILAYER-
dc.subject.keywordPlusLITHOGRAPHY-
dc.subject.keywordPlusMIRRORS-
dc.subject.keywordAuthorEUVL-
dc.subject.keywordAuthorNGL-
dc.subject.keywordAuthorMo/Si-
dc.subject.keywordAuthormultilayer-
dc.subject.keywordAuthorreflectivity-
dc.subject.keywordAuthord-spacing-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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