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Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire HEMTs SCIE SCOPUS
- Title
- Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire HEMTs
- Date Issued
- 2001-03-01
- Publisher
- IEE-INST ELEC ENG
- Abstract
- Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire high electron mobility transistors (NW-HEMTs) are fabricated successfully by using selective wet etching and the depletion characteristic of a Schottky wrap gate (WPG). The devices exhibit very good modulation and saturation characteristics. For an NW-HEMT with an estimated channel width of 250nm, the maximum transconductance is similar to 450mS/mm at a drain voltage of 1.5V.
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 37, no. 5, page. 322 - 323, 2001-03-01
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg