Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C-V measurements

Abstract

An extraction method for device dimensions and lateral channel doping profiles of a VIGBT (vertical insulated-gate bipolar transistor) has been developed. Through two-dimensional numerical analysis and C-V characterizations, the lateral device structure parameters could be extracted. The extracted device parameters are in a good agreement with the expected values of fabricated devices. The method proposed in this paper can be very useful for analyzing the electrical characteristics of a VIGBT. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.