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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, J | - |
| dc.contributor.author | Kim, B | - |
| dc.date.accessioned | 2016-03-31T13:47:30Z | - |
| dc.date.available | 2016-03-31T13:47:30Z | - |
| dc.date.created | 2009-03-18 | - |
| dc.date.issued | 1998-11 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.other | 1998-OAK-0000000487 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20593 | - |
| dc.description.abstract | An extraction method for device dimensions and lateral channel doping profiles of a VIGBT (vertical insulated-gate bipolar transistor) has been developed. Through two-dimensional numerical analysis and C-V characterizations, the lateral device structure parameters could be extracted. The extracted device parameters are in a good agreement with the expected values of fabricated devices. The method proposed in this paper can be very useful for analyzing the electrical characteristics of a VIGBT. (C) 1998 Published by Elsevier Science Ltd. All rights reserved. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
| dc.title | Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C-V measurements | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1016/S0038-1101(98)00202-0 | - |
| dc.author.google | Kim, J | - |
| dc.author.google | Kim, B | - |
| dc.relation.volume | 42 | - |
| dc.relation.issue | 11 | - |
| dc.relation.startpage | 2113 | - |
| dc.relation.lastpage | 2116 | - |
| dc.contributor.id | 10106173 | - |
| dc.relation.journal | SOLID-STATE ELECTRONICS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.42, no.11, pp.2113 - 2116 | - |
| dc.identifier.wosid | 000076995500033 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 2116 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 2113 | - |
| dc.citation.title | SOLID-STATE ELECTRONICS | - |
| dc.citation.volume | 42 | - |
| dc.contributor.affiliatedAuthor | Kim, B | - |
| dc.identifier.scopusid | 2-s2.0-0032208539 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 1 | - |
| dc.type.docType | Letter | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 김범만KIM, BUM MAN
- Dept of Electrical Enginrg